In0.3Ga0.7As0.3P0.7

semiconductor

· In0.3Ga0.7As0.3P0.7

In0.3Ga0.7As0.3P0.7 is a quaternary III-V semiconductor alloy combining indium, gallium, arsenic, and phosphorus in a lattice-matched or near-matched configuration to gallium arsenide (GaAs) substrates. This material is primarily investigated for optoelectronic and high-frequency electronic applications where direct bandgap tunability and lattice compatibility are critical, particularly in research contexts exploring infrared light-emitting devices, photodetectors, and integrated photonic circuits that bridge the near-infrared spectral window.

infrared optoelectronicsphotodetectors and sensorslattice-matched heterostructuresintegrated photonicshigh-frequency transistorsresearch semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.050	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.3Ga0.7As0.3P0.7

Electrical Properties

Regulatory Screening

Environmental

Export Control