In0.3As0.3Ga0.7P0.7

semiconductor

· In0.3As0.3Ga0.7P0.7

In0.3As0.3Ga0.7P0.7 is a quaternary III-V semiconductor alloy combining indium, arsenic, gallium, and phosphorus in a lattice-matched or near-lattice-matched configuration. This material belongs to the InGaAsP family, which is a well-established compound semiconductor system primarily developed for optoelectronic applications requiring direct bandgap tuning across the near-infrared spectrum. The composition sits within research and production space for high-efficiency photonic devices, with potential applications in telecommunications, photodetectors, and solar cells where the ability to engineer bandgap through alloy composition is critical for matching specific wavelength requirements.

fiber optic communicationsphotodetectors and sensorsintegrated photonicssolar photovoltaicslaser diodesresearch optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.050	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.3As0.3Ga0.7P0.7

Electrical Properties

Regulatory Screening

Environmental

Export Control