In0.2P0.2Ga0.8As0.8

semiconductor

· In0.2P0.2Ga0.8As0.8

In0.2P0.2Ga0.8As0.8 is a quaternary III-V semiconductor alloy combining indium phosphide and gallium arsenide constituents, engineered to tune the bandgap and lattice parameters for specific optoelectronic applications. This material family is primarily investigated for high-speed electronic devices and infrared emitters where intermediate bandgap energies between GaAs and InP are required; it represents an experimental or specialized composition rather than a mainstream commercial alloy, valued for its potential to match lattice constants to InP substrates while maintaining favorable transport properties for heterojunction devices.

high-speed transistors and HEMTsinfrared photodetectors and emittersheterojunction device engineeringintegrated photonics researchlattice-matched epitaxial layersquantum well structures

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.580	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.2P0.2Ga0.8As0.8

Electrical Properties

Regulatory Screening

Environmental

Export Control