In0.2Ga0.8As0.8P0.2

semiconductor

· In0.2Ga0.8As0.8P0.2

In0.2Ga0.8As0.8P0.2 is a quaternary III-V semiconductor alloy combining indium, gallium, arsenic, and phosphorus in a lattice-matched composition. This material is engineered for optoelectronic applications where bandgap tuning and lattice compatibility are critical, particularly in long-wavelength infrared and near-infrared device design. Its composition places it in the family of materials used for heterojunction structures, offering a bridge between GaAs/GaP substrates and InAs-based systems, making it valuable for researchers and manufacturers seeking wavelength flexibility without lattice mismatch penalties.

infrared light-emitting diodes (LEDs)laser diodes for telecommunicationsheterojunction photodetectorsintegrated photonics researchfiber-optic communication systemshigh-efficiency solar cells (research)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.580	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.2Ga0.8As0.8P0.2

Electrical Properties

Regulatory Screening

Environmental

Export Control