In0.01P0.01Ga0.99As0.99

semiconductor

· In0.01P0.01Ga0.99As0.99

In0.01P0.01Ga0.99As0.99 is a heavily gallium arsenide (GaAs)-based III-V semiconductor with minimal indium and phosphorus doping, representing a near-binary GaAs composition with subtle bandgap and lattice parameter modification. This material is primarily of research interest for tuning the optoelectronic properties of GaAs—such as bandgap energy and carrier mobility—while maintaining compatibility with existing GaAs device platforms and growth techniques. The small substitutions of In and P allow engineers to engineer light-emitting and photodetecting devices with tailored wavelengths and performance characteristics without requiring entirely new processing infrastructure.

infrared optoelectronicssolar cells and photovoltaicsphotodetectorsintegrated photonics researchbandgap engineeringhigh-frequency transistors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.430	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.01P0.01Ga0.99As0.99

Electrical Properties

Regulatory Screening

Environmental

Export Control