In0.01P0.01Ga0.99As0.99 is a heavily gallium arsenide (GaAs)-based III-V semiconductor with minimal indium and phosphorus doping, representing a near-binary GaAs composition with subtle bandgap and lattice parameter modification. This material is primarily of research interest for tuning the optoelectronic properties of GaAs—such as bandgap energy and carrier mobility—while maintaining compatibility with existing GaAs device platforms and growth techniques. The small substitutions of In and P allow engineers to engineer light-emitting and photodetecting devices with tailored wavelengths and performance characteristics without requiring entirely new processing infrastructure.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.430 | eV | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data