I₄O₈F₄ is an experimental inorganic semiconductor compound combining iodine, oxygen, and fluorine elements, representing an understudied composition within the broader class of halide and mixed-anion semiconductors. This material belongs to a research family of compounds being investigated for potential optoelectronic and photovoltaic applications, though practical industrial deployment remains limited and further characterization is needed. The fluorine and iodine substitution strategy aims to tune electronic band structure and stability compared to conventional semiconductors, making it relevant to researchers exploring alternative semiconductor chemistries for next-generation device architectures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 25.76 | GPa | — | ||
Shear Modulus(G) | 21.27 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.765 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7420 | eV/atom | — |