I2Nd1 is a rare-earth iodide intermetallic compound belonging to the lanthanide halide semiconductor family. While not a mainstream industrial material, compounds in this class are studied for their potential in optoelectronic and photonic applications, particularly where rare-earth dopants can enable luminescence or specialized electronic behavior. Engineers would consider this material primarily in research and development contexts for next-generation optical devices, though further commercialization and performance validation would be needed before widespread adoption in production systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 30.71 | GPa | — | ||
Shear Modulus(G) | 20.91 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00490 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.355 | eV/atom | — |