HoIn3S6

semiconductor

· HoIn3S6

HoIn3S6 is a ternary chalcogenide semiconductor compound combining holmium, indium, and sulfur in a layered crystal structure. This is primarily a research material studied for its potential in optoelectronic and thermoelectric applications, particularly where rare-earth doping and narrow bandgap semiconductors are of interest. The material family offers potential advantages in photovoltaic devices, infrared detectors, and solid-state cooling systems where the combination of rare-earth electronic properties with chalcogenide semiconductors may provide novel functionality.

photovoltaic research devicesinfrared detector materialsthermoelectric cooling systemsrare-earth semiconductor studiesthin-film optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.230	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HoIn3S6

Electrical Properties

Regulatory Screening

Environmental

Export Control