Ho6Fe1Bi2 is an experimental intermetallic compound combining rare-earth holmium, iron, and bismuth in a specific stoichiometric ratio, classified as a semiconductor material. This composition falls within research-stage materials science, likely investigated for its unique electronic and magnetic properties arising from the rare-earth–transition metal–semimetal combination. The material represents exploratory work in functional semiconductors rather than an established commercial product, with potential relevance to advanced electronic devices, magnetic applications, or thermoelectric systems where the rare-earth and bismuth constituents could enable novel property combinations.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 61.56 | GPa | — | ||
Shear Modulus(G) | 33.61 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00660 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4550 | eV/atom | — |