Ho₄In₂ is an intermetallic compound combining holmium (a rare earth element) with indium, classified as a semiconductor material. This compound is primarily of research and developmental interest rather than established commercial production, representing the broader family of rare-earth-indium intermetallics being investigated for advanced electronic and magnetic applications. The material's utility stems from the magnetic properties contributed by holmium combined with indium's semiconducting characteristics, making it a candidate for specialized functional devices where rare-earth elements can enable unique electronic or magnetic behavior not achievable in conventional semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 59.12 | GPa | — | ||
Shear Modulus(G) | 27.59 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00750 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3640 | eV/atom | — |