Ho3 Tl1 C1

semiconductor

· Ho3 Tl1 C1

Ho₃Tl₁C₁ is an experimental ternary carbide semiconductor compound combining holmium, thallium, and carbon, representing a rare-earth metal carbide system. This material belongs to the research-phase category of advanced semiconductors and is not currently established in mainstream industrial production. The compound's potential lies in high-temperature semiconductor applications and specialized research into rare-earth carbide electronic properties, though practical engineering applications remain largely unexplored and would require further development for device integration.

experimental semiconductorshigh-temperature electronics researchrare-earth carbide systemsmaterials science investigation

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	44.10	GPa	—
Shear Modulus(G)	22.92	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.05660	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.595	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ho3 Tl1 C1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control