Ho₂S₃ is a rare-earth metal sulfide semiconductor compound combining holmium with sulfur, belonging to the family of lanthanide chalcogenides. This material remains primarily in the research and development phase, investigated for its electronic and optical properties in specialized semiconductor applications. Its potential applications center on optoelectronic devices, photocatalysis, and thermal imaging systems where rare-earth semiconductors offer unique band-gap characteristics and luminescent properties unavailable in conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 84.40 | GPa | — | ||
Poisson's Ratio(ν) | 0.2800 | - | — | ||
Shear Modulus(G) | 45.08 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.689 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.5000 | eV | — | ||
| ↳ | 0.6470 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -130.8 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -2.250 | eV/atom | — |