Ho₂Tl₁Ag₁ is an intermetallic semiconductor compound combining holmium (rare earth), thallium, and silver. This is a research-phase material studied primarily for its electronic and thermal properties rather than established industrial production. The material belongs to the family of rare-earth based intermetallics, which are of interest in thermoelectric applications, photovoltaic research, and advanced semiconductor device development where the combination of rare-earth elements with post-transition metals can produce tunable band gaps and novel transport properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 70.23 | GPa | — | ||
Shear Modulus(G) | 28.46 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.03640 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3710 | eV/atom | — |