Ho₂Te₆ is a rare-earth telluride semiconductor compound combining holmium and tellurium in a 1:3 stoichiometric ratio. This material belongs to the family of rare-earth chalcogenides and is primarily of research interest rather than established industrial production, with potential applications in thermoelectric devices, infrared optics, and specialized electronic components where rare-earth semiconductors offer unique electronic or photonic properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000500 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5810 | eV/atom | — |