Ho₂Se₁O₂ is a mixed-valence holmium selenide oxide semiconductor, combining rare-earth and chalcogenide chemistry. This compound remains primarily in the research phase, investigated for potential optoelectronic and photocatalytic applications where rare-earth dopants and selenium-based semiconductors show promise for enhanced light absorption and charge carrier dynamics. Engineers would consider this material family for emerging applications in photovoltaics, photocatalysis, or specialty sensors where the unique electronic structure of holmium-containing oxides offers advantages over conventional semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 121.3 | GPa | — | ||
Shear Modulus(G) | 68.23 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.318 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.337 | eV/atom | — |