Ho₂I₆ is a rare-earth iodide semiconductor compound composed of holmium and iodine, belonging to the family of lanthanide halide materials under investigation for advanced optoelectronic and photonic applications. This material is primarily of research interest rather than established industrial production, with potential applications in scintillation detection, infrared optics, and next-generation semiconductor devices where the unique electronic properties of rare-earth halides offer advantages over conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 12.46 | GPa | — | ||
Shear Modulus(G) | 5.073 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.738 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.324 | eV/atom | — |