Ho₂H₆O₆ is a rare-earth hydride oxide compound with semiconductor properties, representing an experimental material within the lanthanide hydride oxide family. This compound is primarily of research interest for exploring electronic behavior in rare-earth systems rather than established industrial production. Its potential applications lie in next-generation electronic devices and photonic materials, though practical engineering deployment remains largely investigational.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 88.42 | GPa | — | ||
Shear Modulus(G) | 31.47 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.801 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.059 | eV/atom | — |