Ho1 Ta1 O4

semiconductor

· Ho1 Ta1 O4

Ho₁Ta₁O₄ is a mixed rare-earth transition metal oxide semiconductor combining holmium and tantalum, belonging to the class of complex perovskite or pyrochlore-related oxides. This is a specialized research compound rather than a commercial material, investigated for its electronic and optical properties in emerging applications where rare-earth doping and high-valence metal oxides offer potential advantages over single-phase alternatives. The material's notable characteristic is the combination of a lanthanide (holmium) with a refractory metal (tantalum), which can yield interesting dielectric, photocatalytic, or photonic properties compared to binary oxides.

photocatalytic materials researchoptical and photonic device developmenthigh-temperature ceramicssemiconductor thin filmsmaterials for next-generation electronicsrare-earth oxide composites

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	193.6	GPa	—
Shear Modulus(G)	93.54	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.498	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-3.315	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ho1 Ta1 O4

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control