Ho1 In3

semiconductor

· Ho1 In3

Ho1In3 is an intermetallic compound composed of holmium and indium, belonging to the rare-earth intermetallic family. This material is primarily of research interest for its magnetic and electronic properties, with potential applications in specialized semiconductor and magnetoelectronic devices where rare-earth elements provide unique magnetic ordering and response characteristics. Unlike conventional semiconductors, rare-earth intermetallics like Ho1In3 are investigated for niche roles where magnetic functionality must be combined with electronic behavior, though industrial adoption remains limited due to cost, scarcity of raw materials, and processing complexity.

rare-earth magnetic materialsexperimental semiconductorsmagnetoelectronic researchspecialized low-temperature devicesquantum materials research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00660	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.3990	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ho1 In3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control