Ho1 In1

semiconductor

· Ho1 In1

Ho1In1 is an intermetallic semiconductor compound composed of holmium and indium in a 1:1 stoichiometric ratio, belonging to the family of rare-earth–group III intermetallic semiconductors. This material is primarily of research and development interest rather than established in high-volume industrial production, with potential applications in thermoelectric devices, magnetic semiconductors, and advanced electronic components that leverage the unique electronic and magnetic properties arising from holmium's rare-earth character combined with indium's semiconducting nature.

thermoelectric materialsresearch semiconductorsmagnetic devicesrare-earth electronicsquantum materials researchcryogenic applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	61.80	GPa	—
Shear Modulus(G)	28.44	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00190	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.4650	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ho1 In1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control