Ho1 Hf1 Os2

semiconductor

· Ho1 Hf1 Os2

Ho₁Hf₁Os₂ is an experimental intermetallic compound combining holmium, hafnium, and osmium—a rare-earth/refractory metal system that belongs to the family of high-entropy or complex intermetallics under research for extreme-environment applications. This ternary phase is not yet established in commercial production, but compounds in this material family are investigated for their potential thermal stability, hardness, and oxidation resistance at elevated temperatures, making them relevant to aerospace and high-temperature structural research communities.

experimental high-temperature materialsrefractory intermetallic researchaerospace thermal barriersextreme-environment coatingsmaterials science investigation

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00750	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.4870	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ho1 Hf1 Os2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control