Ho1 Ge1 O3
semiconductor· Ho1 Ge1 O3
Ho1Ge1O3 is a ternary oxide semiconductor compound combining holmium, germanium, and oxygen in a 1:1:3 stoichiometry. This is a research-phase material studied for potential optoelectronic and photonic applications, belonging to the rare-earth germanate oxide family that shows promise for tunable electronic properties and optical functionalities. The material remains largely in experimental development, with potential relevance to next-generation semiconductor devices where rare-earth doping and germanium-based platforms intersect.
experimental semiconductorsrare-earth photonicsoptical materials researchgermanate ceramicssolid-state device developmentmaterials discovery
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.