Ho1 Cu1 O2
semiconductorHo₁Cu₁O₂ is a mixed-valence copper-holmium oxide semiconductor compound, belonging to the family of rare-earth transition-metal oxides under research for functional electronic and magnetic applications. This material is primarily studied in academic and advanced materials laboratories rather than established industrial production, with potential relevance to oxide-based semiconductors, magnetic devices, and high-temperature applications where rare-earth doping of copper oxides offers tunable electronic properties. Its utility would depend on whether the holmium incorporation enhances specific properties—such as electronic conductivity, magnetic ordering, or thermal stability—relative to simpler copper oxides or holmium compounds.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |