Ho1 Bi2 I1 O4

semiconductor

· Ho1 Bi2 I1 O4

Ho₁Bi₂I₁O₄ is a mixed rare-earth bismuth iodide oxide semiconductor, representing an emerging class of halide perovskite and perovskite-derivative materials. This is primarily a research-phase compound studied for its potential in optoelectronic and photovoltaic applications, where the combination of holmium and bismuth offers tunable band gaps and potential for enhanced light absorption compared to single-cation systems. The material belongs to the broader family of layered halide compounds being explored as alternatives to lead-based perovskites, with potential advantages in thermal stability and reduced toxicity, though industrial-scale synthesis and deployment remain under development.

photovoltaic researchoptoelectronic deviceslead-free perovskite alternativesvisible-light photocatalysisX-ray scintillators (exploratory)thin-film semiconductor research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	79.46	GPa	—
Shear Modulus(G)	44.47	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.538	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.104	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ho1 Bi2 I1 O4

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control