Ho1Bi1 is a binary intermetallic compound composed of holmium and bismuth, belonging to the class of rare-earth bismuth semiconductors. This material is primarily of research interest rather than established industrial production, studied for its potential electronic and magnetic properties that arise from the combination of a rare-earth element (holmium) with a semimetal (bismuth). The Ho-Bi system is explored in condensed matter physics and materials research for fundamental understanding of quantum phenomena and potential applications in advanced electronic or thermoelectric devices, though it remains largely in the experimental phase without widespread commercial deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 57.63 | GPa | — | ||
Shear Modulus(G) | 38.54 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.05060 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8920 | eV/atom | — |