Ho1B1Pd3 is an intermetallic compound combining holmium, boron, and palladium, classified as a semiconductor material. This is a research-phase compound of interest in the rare-earth intermetallic family, where palladium-based systems are studied for their electronic and magnetic properties that differ significantly from conventional semiconductors. Materials in this compositional space are investigated for potential applications in specialized electronics, magnetic devices, and catalytic systems where the unique combination of rare-earth and transition-metal bonding creates tailored electronic behavior.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 150.5 | GPa | — | ||
Shear Modulus(G) | 23.48 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00800 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6260 | eV/atom | — |