Ho1 Al3

semiconductor

· Ho1 Al3

Ho1Al3 is an intermetallic compound composed of holmium and aluminum, belonging to the rare-earth intermetallic family. This material exhibits semiconductor characteristics and is primarily of research interest for investigating novel electronic and magnetic properties arising from rare-earth-aluminum combinations. While not yet established in mainstream industrial applications, materials in this family are being explored for potential use in advanced electronic devices, magnetic applications, and high-temperature structural materials where rare-earth alloying can provide enhanced performance.

rare-earth intermetallic researchadvanced semiconductorsmagnetic materials developmenthigh-temperature applicationsmaterials science experimentation

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	75.47	GPa	—
Shear Modulus(G)	59.50	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.04180	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.4490	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ho1 Al3

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control