HgZnO₂S is a quaternary semiconductor ceramic compound combining mercury, zinc, oxygen, and sulfur elements, representing an experimental mixed-anion ceramic in the oxysulfide family. This material is primarily of research interest for photonic and optoelectronic applications, where the combination of anion types can create tailored bandgaps and optical properties not easily achieved in binary or ternary systems. The material belongs to an emerging class of chalcogenide ceramics being explored for photocatalysis, photodetection, and potentially advanced semiconductor devices, though it remains largely at the development stage rather than in established industrial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | -0.0000695 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.140 | eV/atom | — |