HgTiO₂S is an experimental ternary semiconductor compound combining mercury, titanium, oxygen, and sulfur elements. While not yet established in mainstream engineering production, this material belongs to the family of mixed-metal oxide-sulfide semiconductors under active research for photocatalytic and optoelectronic applications. Its potential lies in photocatalysis (environmental remediation, water splitting) and visible-light-responsive devices, where the hybrid oxide-sulfide structure may offer bandgap tuning advantages over single-phase alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.4000 | eV | — | ||
Magnetic Moment(μB) | -0.00000864 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.6200 | eV/atom | — |