HgTiO2S — Properties & Data | MatWorld

HgTiO2S

semiconductor

· HgTiO2S

HgTiO₂S is an experimental ternary semiconductor compound combining mercury, titanium, oxygen, and sulfur elements. While not yet established in mainstream engineering production, this material belongs to the family of mixed-metal oxide-sulfide semiconductors under active research for photocatalytic and optoelectronic applications. Its potential lies in photocatalysis (environmental remediation, water splitting) and visible-light-responsive devices, where the hybrid oxide-sulfide structure may offer bandgap tuning advantages over single-phase alternatives.

photocatalytic water treatmentenvironmental remediationsolar water splittingoptoelectronic researchvisible-light photocatalystsresearch-stage semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.4000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	-0.00000864	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.6200	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HgTiO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control