HgTeO2N

ceramic

· HgTeO2N

HgTeO₂N is an experimental ceramic compound combining mercury tellurium oxide with nitrogen, belonging to the ternary and quaternary oxide-nitride ceramic family. This material remains primarily in research phase, with investigation focused on optoelectronic and semiconductor properties; it is not established in mainstream industrial production. The material's potential lies in photonic applications or specialized electronic devices where mercury telluride semiconductors have shown promise, though its practical engineering adoption is limited and the nitride incorporation suggests exploration of enhanced bandgap control or phase stability compared to conventional HgTe-based systems.

experimental optoelectronicsinfrared detection (research)wide-bandgap semiconductorsthin-film photonic devicesmaterials research prototyping

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	-0.000310	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.320	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HgTeO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental