HgTe
semiconductorHgTe (mercury telluride) is a narrow-bandgap III-VI compound semiconductor formed from mercury and tellurium, belonging to the family of mercury chalcogenides. It is primarily used in infrared detection and sensing applications, particularly in photodetectors and thermal imaging systems operating in the mid- to far-infrared spectrum where conventional semiconductors are ineffective. Engineers select HgTe for its exceptional sensitivity to long-wavelength infrared radiation and its ability to function at or near room temperature, making it valuable for military, medical thermal imaging, and industrial non-destructive testing where competing materials either require cryogenic cooling or lack comparable spectral responsivity.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 36.43 | GPa | — | ||
| ↳ | 37.03 | GPa | — | ||
Poisson's Ratio(ν) | 0.3600 | - | — | ||
Shear Modulus(G)2 entries | 11.91 | GPa | — | ||
| ↳ | 12.98 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 7.523 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 0.1800 | eV | — | ||
| ↳ | 0.1500 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 25.75 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.5745 | C/m² | — | ||
| ↳ | 0.9141 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -63.26 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.05830 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.1669 | eV/atom | — | ||
| ↳ | 0.05835 | eV/atom | — |