HgTaO2N

semiconductor

· HgTaO2N

HgTaO₂N is an experimental oxynitride semiconductor compound combining mercury, tantalum, oxygen, and nitrogen phases. This material belongs to the family of mixed-anion semiconductors under investigation for photocatalytic and photoelectrochemical applications, where the nitrogen doping of tantalum oxide is intended to narrow the bandgap and improve visible-light absorption compared to conventional TaO₂. While not yet commercialized, oxynitride semiconductors like this are being explored to enhance solar energy conversion efficiency and pollutant degradation under ambient lighting conditions.

photocatalysis researchwater splitting/hydrogen generationenvironmental remediationvisible-light photoelectrochemistrysolar energy conversionadvanced materials development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.8000	eV	—
Magnetic Moment(μB)	-0.0000609	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.4800	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HgTaO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control