HgSe — Properties & Data | MatWorld

HgSe

Name: HgSe
Brand: MatWorld

semiconductor

· HgSe

Mercury selenide (HgSe) is a narrow-bandgap II-VI semiconductor compound formed from mercury and selenium. It is primarily used in infrared (IR) detection and thermal imaging applications, where its ability to respond to mid- and long-wavelength infrared radiation makes it valuable for military, aerospace, and scientific instrumentation. HgSe is chosen for photodetectors and focal plane arrays in scenarios requiring sensitivity in the IR spectrum; it competes with alternatives like HgCdTe and InSb but offers distinct band alignment properties for specific wavelength windows.

infrared photodetectorsthermal imaging sensorsaerospace instrumentationIR focal plane arraysscientific research detectors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

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Method

Property	Value	Unit	Conditions
Bulk Modulus(K)2 entries	41.17	GPa	DFT
↳	45.90	GPa	DFT · OptB88vdW
Poisson's Ratio(ν)	0.3800	-	DFT · OptB88vdW
Shear Modulus(G)2 entries	13.25	GPa	DFT
↳	13.44	GPa	DFT · OptB88vdW

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	7.661	kg/m³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	0.07000	eV	Measured
↳	0.8030	eV	DFT · OptB88vdW
↳	1.640	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)	25.33	-	DFT · OptB88vdW
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	12.45	-	DFT · OptB88vdW
↳	8.117	-	DFT · TBmBJ
Electron Effective Mass(m*e)	0.6367	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	2.593	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.9658	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00103	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00178	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-123.3	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	342	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	30.38	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Method

Property	Value	Unit	Conditions
Energy Above Hull(ΔEhull)	0.01740	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)2 entries	0.00402	eV/atom	DFT · OptB88vdW
↳	-0.2254	eV/atom	Measured

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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HgSe

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