HgNbO2N

semiconductor

· HgNbO2N

HgNbO2N is an experimental oxynitride semiconductor compound combining mercury, niobium, oxygen, and nitrogen elements. This material belongs to the family of transition metal oxynitrides, which are being researched for visible-light photocatalytic and optoelectronic applications where bandgap engineering is critical. While not yet commercialized at scale, oxynitride semiconductors in this class show promise as alternatives to conventional photocatalysts due to their tunable electronic structure, though their development remains largely confined to academic research and specialized materials development programs.

photocatalytic water splittingvisible-light photocatalysisoptoelectronic devicesenvironmental remediationresearch semiconductorsbandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.000	eV	—
Magnetic Moment(μB)	-0.000223	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.5400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HgNbO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control