HgInON₂ is an experimental ternary ceramic compound combining mercury, indium, oxygen, and nitrogen—a rare material composition still primarily in research rather than established industrial production. This material belongs to the family of metal oxynitrides, which are of scientific interest for potential applications in semiconductors, photocatalysis, and optoelectronics where the combination of metallic and nonmetallic elements can create novel electronic properties. Development of such compounds is driven by the search for materials with tunable bandgaps and enhanced catalytic activity, though commercial viability and manufacturing scalability remain uncertain without established property data.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 1.936 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.680 | eV/atom | — |