HgGaO2S is an experimental mixed-metal oxide-sulfide ceramic compound containing mercury, gallium, oxygen, and sulfur. This material belongs to the family of semiconducting and photoactive ceramics, currently studied in research contexts for potential applications in optoelectronics and photocatalysis. The compound represents an emerging class of multinary chalcogenides that may offer tunable band gaps and unique light-interaction properties compared to conventional binary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.9983 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.9600 | eV/atom | — |