HgGaN3

ceramic

· HgGaN3

HgGaN3 is a ternary nitride ceramic compound combining mercury, gallium, and nitrogen elements. This is an experimental research material within the wide-bandgap semiconductor and nitride ceramic family, explored primarily for its potential in high-temperature and high-frequency electronic applications. The material remains largely in the laboratory phase, with interest driven by the gallium nitride platform's proven success in power electronics and RF devices, though mercury incorporation presents synthetic and practical deployment challenges that have limited commercial development.

High-temperature electronics (research)Wide-bandgap semiconductorsRF and microwave devices (experimental)Power semiconductor substratesMaterials science researchNitride compound exploration

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	4.148	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.940	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HgGaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental