HgAsN₃ is an inorganic ceramic compound containing mercury, arsenic, and nitrogen, representing a rare ternary nitride system. This material exists primarily in the research and development domain rather than established industrial production, with potential interest in semiconductor research, optoelectronic device development, and studies of novel nitride material systems. Its practical engineering applications remain limited due to toxicity concerns associated with mercury and arsenic constituents, making handling, processing, and environmental compliance significant barriers compared to conventional nitride ceramics like AlN or GaN.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 2.576 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.880 | eV/atom | — |