HgAlN3

metal

· HgAlN3

HgAlN3 is an experimental ternary nitride compound combining mercury, aluminum, and nitrogen—a research-phase material that does not yet have established commercial production or widespread industrial use. This compound belongs to the family of wide-bandgap semiconductors and nitride systems, which are of interest for potential optoelectronic and high-temperature electronic applications, though HgAlN3 specifically remains largely confined to fundamental materials research.

research compound (not commercial)wide-bandgap semiconductorsexperimental optoelectronicsnitride material systemshigh-temperature electronics (theoretical)materials science studies

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	3.280	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.840	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HgAlN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control