Hg8Bi3As4Cl13

semiconductor

· Hg8Bi3As4Cl13

Hg8Bi3As4Cl13 is a mixed-halide semiconductor compound containing mercury, bismuth, arsenic, and chlorine elements, belonging to the family of heavy-metal halide semiconductors. This is a research-phase material studied primarily for its potential optoelectronic and photonic properties rather than established industrial production. The compound and its chemical family are of interest in specialized applications requiring tunable bandgaps or sensitivity in the infrared region, though it remains largely in exploratory stages and has not displaced conventional semiconductors in mainstream engineering practice.

infrared optoelectronics (research)experimental photonic devicesbandgap engineering studiesspecialized detector applications (research phase)materials science research

Compliance & Regulations

?ITAR?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.430	eV	—

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Regulatory Screening

Environmental

Export Control

Quality & Standards

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hg8Bi3As4Cl13

Electrical Properties

Regulatory Screening

Environmental

Export Control

Quality & Standards