Hg6 As2 Se8 I2
semiconductorHg₆As₂Se₈I₂ is a complex mixed-halide semiconductor compound combining mercury, arsenic, selenium, and iodine elements. This material belongs to the family of chalcogenide and halide semiconductors, which are primarily of research and development interest for optoelectronic and photonic applications rather than established industrial production. The compound's potential lies in infrared detection, nonlinear optical devices, and specialized photonic systems where its bandgap and crystalline structure may offer advantages in wavelength selectivity or radiation hardness; however, it remains largely in the experimental phase with limited commercial deployment due to synthesis complexity, toxicity considerations (mercury), and the availability of more mature alternatives for most applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |