Hg6 As2 Se8 Br2

semiconductor

· Hg6 As2 Se8 Br2

Hg6As2Se8Br2 is a mixed-halide mercury chalcogenide semiconductor compound belonging to the family of narrow-bandgap materials used in infrared and terahertz optoelectronics. This is a research-phase material primarily investigated for its potential in mid- to long-wavelength infrared detection and sensing applications, where its unique combination of mercury, arsenic, selenium, and bromine creates tunable electronic properties. Engineers consider such materials when conventional semiconductors (like HgCdTe or InSb) face constraints in cost, tunability, or performance for specialized thermal imaging, spectroscopy, or defense sensing systems.

infrared detectorsthermal imaging sensorsterahertz opticsspectroscopic instrumentationdefense/security sensingresearch optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.060	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.2030	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hg6 As2 Se8 Br2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control