Hg₆As₁₆S₁₆Br₁₂ is a mixed-halide chalcogenide semiconductor compound containing mercury, arsenic, sulfur, and bromine. This is a research-phase material belonging to the family of complex quaternary semiconductors, synthesized primarily for investigation of optical and electronic properties rather than established commercial production. The compound's potential lies in optoelectronic and photonic device research, particularly in infrared applications and studies of how halide substitution affects semiconductor band structure and transport behavior.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.715 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2490 | eV/atom | — |