Hg₄Se₄O₁₂ is a mixed-valence mercury selenide oxide compound belonging to the family of complex ternary oxides with semiconductor behavior. This material is primarily of research interest rather than established industrial production, studied for its electronic structure and potential optoelectronic properties arising from the combination of mercury, selenium, and oxygen in a structured lattice. The compound represents an experimental platform for understanding charge transfer mechanisms and band structure engineering in mercury-based semiconductors, with potential relevance to photodetection or photovoltaic applications if processing challenges can be overcome.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.307 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6730 | eV/atom | — |