Hg4 S2 O8
semiconductorHg₄S₂O₈ is a mercury-sulfur-oxide semiconductor compound, representing an uncommon mixed-valence material that combines metallic mercury with sulfide and oxide anions in a layered or complex crystal structure. This is a research-phase compound rather than a commercial material; it belongs to the broader family of mercury chalcogenides and mixed-anion semiconductors that are of interest for exploratory studies in solid-state physics and materials discovery. The material's potential relevance lies in niche applications requiring specialized optical, electrical, or photochemical properties—such as photosensitive devices, radiation detection, or catalytic surfaces—though practical engineering adoption remains limited due to mercury's toxicity, regulatory restrictions, and the availability of safer alternatives for most semiconductor applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |