Hg₂Se₂O₈ is an inorganic semiconductor compound containing mercury, selenium, and oxygen, representing a mixed-valence oxychalcogenide material. This is primarily a research-phase compound studied for its semiconducting properties and potential optoelectronic characteristics; it is not currently established in mainstream industrial production. The material belongs to a family of layered oxychalcogenides being investigated for photovoltaic, photodetector, and possibly nonlinear optical applications where the combination of metal, chalcogen, and oxide components may offer tunable band gaps and unique electronic behavior compared to simpler binary semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 59.59 | GPa | — | ||
Shear Modulus(G) | 18.73 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9030 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5290 | eV/atom | — |