Hg2 Bi2 O6

semiconductor

· Hg2 Bi2 O6

Hg₂Bi₂O₆ is a mixed-metal oxide semiconductor compound containing mercury and bismuth, belonging to the family of complex oxides under active research for functional electronic and photonic applications. This material is primarily of research interest rather than established industrial production, with potential applications in photocatalysis, optoelectronics, and sensing due to the unique electronic properties that arise from the combination of mercury and bismuth oxide phases. Its development is driven by efforts to create novel semiconductors with tunable band gaps and enhanced light-matter interactions, though practical deployment remains limited pending optimization of synthesis routes and long-term stability.

photocatalytic materials (research)optoelectronic devices (developmental)environmental sensingexperimental semiconductor researchlead-free alternatives exploration

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00450	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.7890	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hg2 Bi2 O6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control