Hg₁₂Sb₄As₄S₁₂ is a quaternary chalcogenide semiconductor compound combining mercury, antimony, arsenic, and sulfur elements. This material belongs to the family of complex sulfide semiconductors and is primarily of research interest for its potential in infrared optics and photonic applications, where its wide bandgap and optical properties in the infrared spectrum could offer advantages over simpler binary or ternary semiconductors. The compound represents an experimental material composition rather than an established industrial workhorse, with development focused on specialized photonic and sensing technologies where conventional semiconductor alternatives may be limited.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.440 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1430 | eV/atom | — |