HgP₂Se is a ternary semiconductor compound combining mercury, phosphorus, and selenium in a mixed-anion structure. This material belongs to the family of II-V-VI semiconductors and is primarily investigated in research contexts for its potential optoelectronic and photodetection properties, particularly in infrared detection applications where its bandgap and carrier transport characteristics may offer advantages over binary alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00160 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.7200 | eV/atom | — |