Hg1 Os1 O3
semiconductor· Hg1 Os1 O3
HgOsO₃ is a mixed-metal oxide semiconductor containing mercury and osmium, representing an experimental compound in the family of complex metal oxides with potential for electronic and photonic applications. This material remains primarily in research phase; its development is driven by interest in novel oxide semiconductors with unusual electronic structures, particularly for next-generation optoelectronic devices or catalytic applications where the combination of heavy metals might enable unique band gap engineering or charge-transfer properties.
experimental semiconductor researchphotonic materials developmentcatalysis applicationsoxide electronicsadvanced functional materialsmaterials science investigation
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.